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Auflistung nach Schlagwort "Semiconducting silicon"

Anzeige der Dokumente 1-7 von 7

Coupled Pb chains on Si(557): Origin of one-dimensional conductance

Tegenkamp, Christoph; Ohta, T.; McChesney, J.L.; Dil, H.; Rotenberg, E.; Pfnür, Herbert; Horn, K. (College Park, MD : American Physical Society, 2008)

The Pb/Si(557) system exhibits a strong anisotropy in conductance below 78 K, with the evolution of a characteristic chain structure. Here we show, using angle-resolved photoemission, that chain ordering results in complete ...
Experimental setup for camera-based measurements of electrically and optically stimulated luminescence of silicon solar cells and wafers

Hinken, David; Schinke, Carsten; Herlufsen, Sandra; Schmidt, Arne; Bothe, Karsten; Brendel, Rolf (College Park, MD : American Institute of Physics, 2011)

We report in detail on the luminescence imaging setup developed within the last years in our laboratory. In this setup, the luminescence emission of silicon solar cells or silicon wafers is analyzed quantitatively. Charge ...
Giant anisotropy of zeeman splitting of quantum confined acceptors in Si/Ge

Haendel, K.-M.; Winkler, R.; Denker, U.; Schmidt, O.G.; Haug, Rolf J. (College Park, MD : American Physical Society, 2006)

Shallow acceptor levels in Si/Ge/Si quantum well heterostructures are characterized by resonant-tunneling spectroscopy in the presence of high magnetic fields. In a perpendicular magnetic field we observe a linear Zeeman ...
Lifetime Analysis for Defect Characterization in Kerfless Epitaxial Silicon from the Porous Silicon Process

Gemmel, Catherin; Hensen, Jan; Kajari-Schröder, Sarah; Brendel, Rolf (London : Elsevier Ltd., 2016)

Kerfless epitaxial silicon from the porous silicon (PSI) process is a promising alternative for standard wafers. They allow the reduction of PV costs by combining high material quality at reduced production costs. We ...
Magnetoresistance anisotropy in Si/SiGe in tilted magnetic fields: Experimental evidence for a stripe-phase formation

Zeitler, U.; Schumacher, Hans W.; Jansen, A.G.M.; Haug, Rolf J. (College Park, MD : American Physical Society, 2001)

The anisotropies induced by an in-plane field in the magnetotransport properties of coinciding Landau levels in the two dimensional electron system of a silicon/silicon germanium (Si/SiGe) heterostructure were investigated. ...
Numerical Modeling of c-Si PV Modules by Coupling the Semiconductor with the Thermal Conduction, Convection and Radiation Equations

Vogt, Malte R.; Holst, Hendrik; Winter, Matthias; Brendel, Rolf; Altermatt, Pietro P. (Amsterdam : Elsevier, 2015)

Commonly, the thermal behavior of solar cell modules is calculated with analytical approaches using non wavelength-dependent optical data. Here, we employ ray tracing of entire solar modules at wavelengths of 300-2500 nm ...
The effect of oxide precipitates on minority carrier lifetime in n-type silicon

Murphy, J.D.; Al-Amin, M.; Bothe, K.; Olmo, M.; Voronkov, V.V.; Falster, R.J. (College Park, MD : American Institute of Physics, 2015)

Supersaturated levels of interstitial oxygen in Czochralski silicon can lead to the formation of oxide precipitates. Although beneficial from an internal gettering perspective, oxygen-related extended defects give rise to ...

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Auflistung nach Schlagwort "Semiconducting silicon"

Auflistung nach Schlagwort "Semiconducting silicon"

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